ORAU

GaN also offers a number of excellent mechanical properties, making it a suitable material for MEMS. Particularly, GaN and its related material family are very interesting for harsh environment applications.. Our research objective is to develop a sensor technology platform that is temperature and radiation tolerant using gallium nitride MEMS technology.. Jet Propulsion Laboratory. U.S. Lawful Permanent Residents (LPR);. Applicants for LPR, asylees, or refugees in the U.S. at the time of application with 1) a valid EAD card and 2) I-485 or I-589 forms in pending status

systems

Organization National Aeronautics and Space Administration (NASA) Reference Code 0178-NPP-JUL24-JPL-PlanetSci Application Deadline 7/1/2024 6:00:59 PM Eastern Time Zone Description In the last few years we have seen rapid growth of III-V semiconductors geared towards a variety of applications where silicon performance falls short. Gallium nitride (GaN), a III-V semiconductor, is proven to be the material of choice for high- frequency, high-power, and high-temperature applications. GaN also offers a number of excellent mechanical properties, making it a suitable material for MEMS. Particularly, GaN and its related material family are very interesting for harsh environment applications. Beyond earth, GaN based microsystems can enable low-cost and long-lasting planetary exploration missions to hot planets. Our research objective is to develop a sensor technology platform that is temperature and radiation tolerant using gallium nitride MEMS technology. In this specific project the postdoc will help with developing temperature stable sensors and micro-instruments working at 500C using GaN based acoustic and micromechanical components. References: M. Rais-Zadeh, D. Weinstein, Gallium Nitride for M/NEMS, Book chapter in Piezoelectric MEMS Resonators, pp. 73-98, 2017 M. Rais-Zadeh, et. al, Gallium Nitride as an electromechanical material, J. of Microelectromechanical Microsystems, vol. 23, issue 6, pp. 1252-1271, 2014 Location: Jet Propulsion Laboratory Pasadena, California Field of Science:Planetary Science Advisors: Mina Rais-Zadeh mina.rais-zadeh@jpl.nasa.gov 626-460-9989 Applications with citizens from Designated Countries will not be accepted at this time, unless they are Legal Permanent Residents of the United States. A complete list of Designated Countries can be found at: https://www.nasa.gov/oiir/export-control. Eligibility is currently open to: <ul><li>U.S. Citizens;</li><li>U.S. Lawful Permanent Residents (LPR);</li><li>Foreign Nationals eligible for an Exchange Visitor J-1 visa status; and,</li><li>Applicants for LPR, asylees, or refugees in the U.S. at the time of application with 1) a valid EAD card and 2) I-485 or I-589 forms in pending status </li></ul>Eligibility Requirements <ul><li> Degree: Doctoral Degree.</li></ul>

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