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MBE Materials Development Engineer
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Full-time
- Job Summary :As a member of the AMS Department, the individual in this role will work closely with the staff at Raytheon’s RF Components III-V device foundry to develop new microwave and millimeter device technology.
- In this position the chosen candidate will be responsible for the development and optimization of new III-V Molecular Beam Epitaxial (MBE) growth processes, exploration of novel material structures for next generation devices, and maintaining / improving epitaxial growth systems.
- The candidate is expected to operate and help maintain the R&D MBE systems in the foundry’s cleanroom environment.
- The chosen candidate will also be expected to perform basic materials characterization and interpret results for techniques including XRD, Hall, SIMS, CV/IV, AFM, and SEM. The chosen candidate is expected to be innovative, a creative thinker and problem solver, able to perform and support growth development, assist in pursuing contract R&D, and assist in transitioning material structures into production.
- Solid state physics and/or device physics experience is desired as the ideal candidate will also assist in improving the foundry’s various III-V device fabrication process flows especially as they relate to incorporating new epitaxial materials.
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