SRAM Process Development Engineer

Overview In this role, you will lead SRAM memory device development within TI's Advanced Technology Development team, collaborating with wafer fabrication and design groups to deliver high-density, reliable SRAM solutions. You’ll define and execute experiments, characterize devices, simulate bitcells, and drive yield and qualification for production. You will engage across business and engineering teams on pathfinding projects that shape TI’s memory technology roadmap. This is a high-impact, cross-functional role at the frontier of memory innovation. Compensation / Benefitscompetitive paybenefits designed for well-beingopportunity to impact memory technology roadmap ResponsibilitiesSRAM bitcell design and device integrationProcess integration and design rule developmentSWR/DOE definition and experimentsTest structure definition and characterizationData analysis and device/system performance evaluationProcess control document generation and yield improvementDevice characterization and device-level simulationDrive SRAM yield and qualification for productionCollaboration with fabrication facilities and multiple design groupsParticipate in innovative pathfinding projects Key requirements10+ years of relevant experience with CMOS and memory processesSolid understanding of SRAM operation, reliability, and memory integrationProven ability to simulate SRAM bitcells (process, electrical, circuit levels)Knowledge of CMOS/device physics and memory device behaviorExperience with yield and data analysisStrong communication and documentation skillsHands-on, ownership-driven work styleAbility to coordinate across multiple organizations and management chainsexcellent communicationstrong organizational abilitiesteam collaborationSpectre simulationCadence design and layout toolsdata analysis tools (JMP, Spotfire, Dataware)